Monte Carlo analysis of phosphorene nanotransistors

Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of theoretical performed to screen these limited room-temperature carrier mobility free-standing 2D layers. With dimensions devices moving toward nanometer-scale lengths, mobility—an equilibrium concept—may not be main quantity that controls performance based materials, since electronic transport occurs under strong off-equilibrium conditions. Here we account for non-equilibrium conditions and, case monolayer phosphorene (monolayer black phosphorus), show results device simulations a short-channel n-MOSFET, using Monte Carlo method coupled with Poisson equation, including full bands electron–phonon matrix elements obtained from density functional theory. Our reveal significant intrinsic limitations as channel material nanotransistors.